Gate-all-around type semiconductor device and method of manufacturing the same

ABSTRACT

The gate-all-around (GAA) type semiconductor device may include source/drain layers, a nanowire channel, a gate electrode and an insulation layer pattern. The source/drain layers may be disposed at a distance in a first direction on a semiconductor substrate. The nanowire channel may connect the source/drain layers. The gate electrode may extend in a second direction substantially perpendicular to the first direction. The gate electrode may have a height in a third direction substantially perpendicular to the first and second directions and may partially surround the nanowire channel. The insulation layer pattern may be formed between and around the source/drain layers on the semiconductor substrate and may cover the nanowire channel and a portion of the gate electrode. Thus, a size of the gate electrode may be reduced, and/or a gate induced drain leakage (GIDL) and/or a gate leakage current may be reduced.

PRIORITY STATEMENT

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 2006-97082, filed on Oct. 2, 2006, in the Korean PatentOffice, the entire contents of which are incorporated herein byreference.

BACKGROUND

1. Field

Example embodiments relate to a semiconductor device and a method ofmanufacturing the same. More particularly, example embodiments relate toa gate-all-around (GAA) type semiconductor device and a method ofmanufacturing the same.

2. Description of Related Art

As an integration degree of semiconductor devices has increased, a sizeof a region for forming unit cells, e.g., a size of an active region hasbeen reduced, and thus a channel length of a metal-oxide-semiconductor(MOS) transistor formed in the active region has been reduced. If thechannel length of the MOS transistor is reduced, a short channel effect,e.g., an effect of a source/drain region on an electric field of achannel region, may be increased and a channel driving capability of agate electrode may be deteriorated. Additionally, the source/drainregion and the gate electrode may be closely disposed to each other sothat a high electric field may be generated between the source/drainregion and the gate electrode, and a gate induced drain leakage (GIDL)may be increased. Furthermore, a gate leakage current, e.g., a currentflowing through the source/drain region due to the gate electrode, maybe increased.

In order to solve the above problems, a gate-all-around (GM) type MOStransistor, in which a channel region is surrounded by a gate electrode,has been developed. The GM type MOS transistor may have a reduced shortchannel effect, because the channel region may be surrounded by the gateelectrode so that an effect of the source/drain region on an electricfield of the channel region may be reduced. However, as the gateelectrode makes contact with the source/drain region at a broad area,solving the above problems of the high GIDL and the high gate leakagecurrent may not be easy.

SUMMARY

Example embodiments provide a gate-all-around (GAA) type semiconductordevice, in which a gate induced drain leakage (GIDL) and/or a gateleakage current may be reduced.

Example embodiments provide a method of manufacturing a GAA typesemiconductor device, in which a GIDL and/or a gate leakage current maybe reduced.

According to an example embodiment, there may be provided a GAA typesemiconductor device. The GAA type semiconductor device may includesource/drain layers, a nanowire channel, a gate electrode and aninsulation layer pattern. The source/drain layers may be disposed at adistance in a first direction on a semiconductor substrate. The nanowirechannel connects the source/drain layers. The gate electrode may extendin a second direction substantially perpendicular to the firstdirection. The gate electrode may have a height in a third directionsubstantially perpendicular to the first and second directions and maypartially surround the nanowire channel. The insulation layer patternmay be formed between and around the source/drain layers on thesemiconductor substrate and covers the nanowire channel and a portion ofthe gate electrode.

In an example embodiment, the semiconductor device may further include asacrificial layer pattern formed between the semiconductor substrate andthe source/drain layers.

In an example embodiment, the semiconductor substrate, the source/drainlayers, and the sacrificial layer pattern may include single crystalsilicon, doped single crystal silicon, silicon germanium, respectively.

In an example embodiment, the nanowire channel may have a circularcylindrical shape or an elliptic cylindrical shape extending along thefirst direction.

In an example embodiment, the gate electrode may include a metal, ametal nitride or polysilicon.

In an example embodiment, the gate electrode may include titaniumnitride.

In an example embodiment, a plurality of active regions, each of whichincludes the nanowire channel and a pair of the source/drain layersconnected to each other by the nanowire channel, may be formed on thesemiconductor substrate.

In an example embodiment, the insulation layer pattern may serve as anisolation layer for isolating the active regions from one another.

According to another example embodiment, there is a method ofmanufacturing a gate-all-around (GAA) type semiconductor device. In themethod of manufacturing the GAA type semiconductor device, a preliminarysacrificial layer pattern, a preliminary channel layer pattern and amask pattern may be formed on a semiconductor substrate. The preliminarysacrificial layer pattern and the preliminary channel layer pattern mayhave a first width greater than a second width of the mask pattern. Afirst insulation layer may be formed on the semiconductor substrate tocover the mask pattern, the preliminary channel layer pattern and thepreliminary sacrificial layer pattern. The first insulation layer mayhave a first opening exposing a portion of the mask pattern. A secondopening may be formed by removing the exposed portion of the maskpattern. The second opening may expose a portion of the preliminarychannel layer pattern. A sacrificial layer pattern and a channel layerpattern may be formed on the semiconductor substrate by removing theexposed portion of the preliminary channel layer pattern and a portionof the preliminary sacrificial layer pattern disposed under the exposedportion of the preliminary channel layer pattern. A third opening may beformed by partially removing the first insulation layer. The thirdopening may contain the channel layer pattern and the sacrificial layerpattern. The channel layer pattern may be transformed to a preliminarynanowire channel by removing the sacrificial layer pattern. A gateconductive layer may be formed on the semiconductor substrate to coverthe third opening. The first insulation layer and the mask pattern maybe removed. A gate electrode may be formed by partially removing thegate conductive layer to detach the gate electrode from the preliminarychannel layer pattern. A second insulation layer may be formed on thesemiconductor substrate to cover the gate electrode, the preliminarynanowire channel, the preliminary channel layer pattern and thepreliminary sacrificial layer pattern. Impurities may be implanted intothe preliminary channel layer pattern to convert the preliminary channellayer pattern and the preliminary nanowire channel into a source/drainlayer and a nanowire channel, respectively.

In an example embodiment, the semiconductor substrate and thepreliminary channel layer pattern may be formed using single crystalsilicon, and the preliminary sacrificial layer pattern may be formedusing silicon germanium.

In an example embodiment, the preliminary channel layer pattern and thepreliminary sacrificial layer pattern may be formed by an epitaxialgrowth process.

In an example embodiment, prior to forming the gate conductive layer,the preliminary nanowire channel may be annealed.

In an example embodiment, the preliminary nanowire channel may beannealed at a temperature of about 800 to about 1000° C. at a pressurebelow about 10 Torr for about 100 to about 1000 seconds.

In an example embodiment, prior to implanting the impurities into thepreliminary channel layer pattern, the second insulation layer may bepartially removed until an upper face of the preliminary channel layerpattern may be exposed to form a second insulation layer pattern andexpose an upper portion of the gate electrode. A third insulation layermay be formed on the preliminary channel layer pattern and the secondinsulation layer pattern to cover the upper portion of the gateelectrode. The third insulation layer may be partially removed by anetch-back process to form a spacer on a sidewall of the gate electrode,a portion of the preliminary channel layer pattern and a portion of thesecond insulation layer pattern.

In an example embodiment, the second insulation layer may be removeduntil a top surface of the gate electrode may be exposed. A top surfaceof the second insulation layer and the top surface of the gate electrodemay be planarized.

In an example embodiment, the gate electrode may be formed by astripping process using polyacrylonitrile (PAN).

In an example embodiment, the sacrificial layer pattern and the channellayer pattern may be formed by a dry etching process.

In an example embodiment, the gate conductive layer may be formed usinga metal, a metal nitride or polysilicon.

In an example embodiment, the gate electrode may be formed usingtitanium nitride.

In an example embodiment, in a gate-all-around (GAA) type semiconductordevice having a nanowire channel, a size of a gate electrode may bereduced and an insulation layer pattern may be formed between the gateelectrode and a source/drain layer. Thus, an area at which the gateelectrode makes contact with the source/drain layer may be reduced sothat a gate induced drain leakage (GIDL) may be reduced. Additionally, agate leakage current may be reduced because a distance between the gateelectrode and the source/drain layer may be increased. Furthermore, thegate electrode may have a size smaller than that of a conventional gateelectrode so that the GAA type semiconductor device may be advantageouswith respect to physical space requirements, and general integration.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of example embodiments willbecome more apparent by describing in detailed example embodiments withreference to the attached drawings. The accompanying drawings areintended to depict example embodiments and should not be interpreted tolimit the intended scope of the claims. The accompanying drawings arenot to be considered as drawn to scale unless explicitly noted.

FIG. 1A is a perspective view illustrating a gate-all-around (GAA) typesemiconductor device in accordance with an example embodiment.

FIG. 1B is a cross-sectional view illustrating a GAA type semiconductordevice taken along a line I-I′ in FIG. 1.

FIG. 1C is a cross-sectional view illustrating a GAA type semiconductordevice taken along a line II-II′ in FIG. 1.

FIGS. 2A to 2T are perspective views illustrating a method ofmanufacturing a GM type semiconductor device in accordance with exampleembodiments.

FIGS. 3A to 3G are cross-sectional views illustrating a GAA typesemiconductor device taken along a line III-III′ to a line IX-IX′ inFIGS. 2N to 2T, respectively.

DESCRIPTION OF EXAMPLE EMBODIMENTS

Example embodiments having thus been described, it will be obvious thatthe same may be varied in many ways. Such variations are not to beregarded as a departure from the intended spirit and scope of exampleembodiments, and all such modifications as would be obvious to oneskilled in the art are intended to be included within the scope of thefollowing claims.

Detailed example embodiments are disclosed herein. However, specificstructural and functional details disclosed herein are merelyrepresentative for purposes of describing example embodiments. Exampleembodiments may, however, be embodied in many alternate forms and shouldnot be construed as limited to only the embodiments set forth herein.

Accordingly, while example embodiments are capable of variousmodifications and alternative forms, embodiments thereof are shown byway of example in the drawings and will herein be described in detail.It should be understood, however, that there is no intent to limitexample embodiments to the particular forms disclosed, but to thecontrary, example embodiments are to cover all modifications,equivalents, and alternatives failing within the scope of exampleembodiments. Like numbers refer to like elements throughout thedescription of the figures.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of example embodiments. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it may be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between”, “adjacent” versus “directlyadjacent”, etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising,”, “includes” and/or “including”, when usedherein, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

It should be noted that in some alternative implementations, thefunctions/acts noted may occur out of the order noted in the figures.For example, two figures shown in succession may in fact be executedsubstantially concurrently or may sometimes be executed in the reverseorder, depending upon the functionality/acts involved.

Example embodiments are described more fully hereinafter with referenceto the accompanying drawings. Example embodiments may, however, beembodied in many different forms and should not be construed as limitedto the example embodiments set forth herein. Rather, these exampleembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the example embodiments tothose skilled in the art. In the drawings, the sizes and relative sizesof layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of theexample embodiments. As used herein, the singular forms “a,” “an” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized example embodiments (and intermediate structures). As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, example embodiments should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe example embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this example embodiment belongs.It will be further understood that terms, such as those defined incommonly used dictionaries, should be interpreted as having a meaningthat is consistent with their meaning in the context of the relevant artand will not be interpreted in an idealized or overly formal senseunless expressly so defined herein.

Hereinafter, example embodiments will be explained in detail withreference to the accompanying drawings.

FIG. 1A is a perspective view illustrating a gate-all-around (GAA) typesemiconductor device in accordance with example embodiments, FIG. 1B isa cross-sectional view illustrating a GAA type semiconductor devicetaken along a line I-I′ in FIG. 1, and FIG. 1C is a cross-sectional viewillustrating a GAA type semiconductor device taken along a line II-II′in FIG. 1.

Referring to FIGS. 1A to 1C, a GAA type semiconductor device may includesacrificial layer patterns 2 formed on a semiconductor substrate 1, asource and drain layer 3 separated a predetermined distance apart fromeach other, a gate electrode 5 and an insulation layer pattern 7. A GAAtype semiconductor device may further include a nanowire channel 4formed between the source/drain layers 3 and a spacer 6.

The semiconductor substrate 1 may include silicon. In an exampleembodiment, the semiconductor substrate 1 may include single crystalsilicon. A portion of the semiconductor substrate 1 may be protruded ina third direction D3, which may be substantially perpendicular to aplane, on which the semiconductor substrate 1 and the sacrificial layerpatterns 2 may be formed.

The sacrificial layer patterns 2 may include a material having anetching selectivity with respect to the semiconductor substrate 1 andthe source/drain layers 3. In an example embodiment, the sacrificiallayer patterns 2 may include silicon germanium. The sacrificial layerpatterns 2 may be formed from a sacrificial layer, which may form thenanowire channel 4. Alternatively, the sacrificial layer patterns 2 maynot be formed.

The source/drain layers 3 may be formed on the sacrificial layerpatterns 2. In an example embodiment, the source/drain layers 3 mayinclude silicon doped with impurities.

The sacrificial layer patterns 2 and the source/drain layers 3 may bedivided along a first direction D1 by the insulation layer pattern 7that may be formed on the semiconductor substrate 1. That is, thesacrificial layer patterns 2 and the source/drain layers 3 may extend inthe first direction D1 and may be divided by the insulation layerpattern 7 extending in a second direction D2 substantially perpendicularto the first direction D1.

The nanowire channel 4 may connect the source/drain layers 3 which maybe divided by the insulation layer pattern 7. The nanowire channel 4 mayhave a bridge shape such as a circular cylindrical shape or an ellipticcylindrical shape having a lengthwise direction in parallel with thefirst direction D1. In an example embodiment, the nanowire channel 4 mayinclude silicon doped with impurities.

A gate insulation layer (not shown) including silicon oxide may befurther formed on the nanowire channel 4.

The gate electrode 5 may extend along the second direction D2 and mayhave a height extending along the third direction D3. The gate electrode5 may be partially covered by the insulation layer pattern 7 and thegate electrode 5 may cover a central portion of the nanowire channel 4.

The gate electrode 5 may include a metal nitride such as titaniumnitride, tantalum nitride, etc., a metal such as titanium, tantalum,etc., or polysilicon. In an example embodiment, the gate electrode 5 mayinclude titanium nitride.

Unlike a conventional gate-all-around (GAA) type MOS transistor, a GAAtype MOS transistor in accordance with example embodiments may includean insulation layer pattern 7 formed between a gate electrode 5 andsource/drain layers 3 (depicted in FIG. 1B) so that an area in which thegate electrode 5 and the source/drain layers 3 may make contact witheach other may be reduced. Thus, a gate induced drain leakage (GIDL) maybe reduced. Additionally, a gate leakage current may be reduced becausea distance between the gate electrode 5 and the source/drain layers 3may be increased. Furthermore, the gate electrode 5 may have a sizesmaller than that of a conventional GAA MOS transistor, thereby having agreater integration degree. That is, the integration degree may beincreased by reducing the size of the gate electrode 5 and theinsulation layer pattern 7 partially covering the gate electrode 5.

A spacer 6 may be formed on a sidewall of the gate electrode 5, whichmay be protruded from the source/drain layers 3 and the insulation layerpattern 7. The spacer 6 covers the sidewall of the gate electrode 5, aportion of the source/drain layers 3 and a portion of the insulationlayer pattern 7.

The spacer 6 may have a width in the first direction D1 greater than orsubstantially the same as a length of the nanowire channel 4. Thus, ifimpurities are doped into a single crystal silicon layer to form thesource/drain layers 3, the impurities may not be directly doped into thenanowire channel 4, but may be indirectly doped into the nanowirechannel 4 via the source/drain layers 3 so that the nanowire channel 4may be prevented from being damaged.

The spacer 6 may include an oxide such as silicon oxide or a nitridesuch as silicon nitride. In an example embodiment, the spacer 6 mayinclude silicon nitride.

The insulation layer pattern 7 may include an oxide such as siliconoxide, a high density plasma (HDP) oxide, etc. The insulation layerpattern 7 may divide the sacrificial layer patterns 2 and thesource/drain layers 3 and may serve as an isolation layer. That is, if aplurality of active regions, each of which has the sacrificial layerpatterns 2 and the nanowire channel 4, is formed in the semiconductordevice, the insulation layer pattern 3 may electrically insulate each ofthe active regions from one another. Particularly, if the active regionsextending in the first direction D1 are disposed in the second directionD2, the active regions may be divided by the insulation layer pattern 7.

FIGS. 2A to 2T are perspective views illustrating a method ofmanufacturing a gate-all-around (GAA) type semiconductor device inaccordance with example embodiments, and FIGS. 3A to 3G arecross-sectional views illustrating the GAA type semiconductor devicetaken along a line III-III′ to a line IX-II′ in FIGS. 2N to 2T,respectively.

Referring to FIG. 2A, a sacrificial layer 20, a channel layer 30 and afirst mask layer 40 may be formed on a semiconductor substrate 10.

The semiconductor substrate 10 and the channel layer 30 may be formedusing silicon. In an example embodiment, the semiconductor substrate 10and the channel layer 30 may be formed using single crystal silicon.

The sacrificial layer 20 may be partially removed in a successiveprocess, and may be formed using a material having an etchingselectivity with respect to the channel layer 30. In an exampleembodiment, the sacrificial layer 20 may be formed using silicongermanium by an epitaxial growth process. The channel layer 30 may bealso formed by an epitaxial growth process.

The first mask layer 40 may be formed using a material having an etchingselectivity with respect to the channel layer 30, the sacrificial layer20 and the semiconductor substrate 10, thereby being used as an etchingmask in a successive process. For example, the first mask layer 40 maybe formed using a nitride such as silicon nitride.

A pad oxide layer (not shown) may be further formed between the channellayer 30 and the first mask layer 40.

Referring to FIG. 2B, the first mask layer 40 may be patterned to extendin the first direction D1. Thus, a plurality of first masks 42 having afirst opening 51 therebetween, which partially exposes the channel layer30, may be formed. The first masks 42 may be formed by a conventionalphotolithography process using a first photoresist layer (not shown).The plurality of the first masks 42 may be disposed in the seconddirection D2.

The channel layer 30, the sacrificial layer 20 and the semiconductorsubstrate 10 may be partially removed by an etching process using thefirst masks 42 as etching masks so that a second opening 52 partiallyexposing an upper face of the semiconductor substrate 10 may be formed.Thus, a plurality of preliminary sacrificial layer patterns 22 and aplurality of preliminary channel layer patterns 32 may be formed on thesemiconductor substrate 10, as depicted in FIG. 2C. The etching processmay include a dry etching process using an etching gas or a wet etchingprocess using an etching solution. If the semiconductor substrate 10,the sacrificial layer 20 and the channel layer 30 are formed usingsilicon, silicon germanium and silicon, respectively, examples of theetching solution may include a mixed solution containing hydrogenperoxide, hydrogen fluoride and acetic acid, a mixed solution containingammonium hydroxide, hydrogen peroxide and deionized water, a solutioncontaining peracetic acid, etc.

If the plurality of the first masks 42 is formed, a plurality of thesecond openings 52 may be disposed in the second direction D2.Hereinafter, an area A (depicted in FIG. 2C) disposed between two of thesecond openings 52 is illustrated, for simplicity of explanation.

The first mask 42 may be trimmed to form a narrowed mask pattern 44, asdepicted in FIG. 2D, so that an upper face of the preliminary channellayer pattern 32 may be partially exposed. That is, the first mask 42,which extends in the first direction D1, may be trimmed so that theupper face of the preliminary channel layer pattern 32 may be partiallyexposed. If the first mask 42 is formed using a nitride such as siliconnitride, the first mask 42 may be trimmed by a wet etching process usingphosphoric acid.

If the preliminary channel layer pattern 32 has a first width W1, themask pattern 44 may have a second width W2 smaller than the first widthW1, and a difference between the first and second widths W1 and W2 maybe proportional to a diameter of a nanowire channel successively formed.Thus, if the mask pattern 44 is formed, the first mask 42 may be trimmedin consideration of the diameter of the nanowire channel.

Referring to FIG. 2E, a first insulation layer 60 may be formed on thesemiconductor substrate 10 to cover the mask pattern 44, the preliminarychannel layer pattern 32 and the preliminary sacrificial layer pattern22. The first insulation layer 60 may be formed using an oxide such assilicon oxide. The first insulation layer 60 may be removed until a topsurface of the mask pattern 44 is exposed. The top surface of the firstinsulation layer 60 and a top surface of the first insulation layer 60may be planarized by a chemical mechanical polishing (CMP) process, anetch-back process, or a combination process of CMP and etch-back.

Referring to FIG. 2F, a second insulation layer 70 and a second masklayer 80 may be formed on the first insulation layer 60 and the maskpattern 44.

The second insulation layer 70 may be formed using a materialsubstantially the same as that of the first insulation layer 60 or amaterial different from that of the first insulation layer 60. Thesecond insulation layer 70 may be formed using a material having anetching selectivity with respect to the second mask layer 80, the maskpattern 44, the preliminary channel layer pattern 32 and the preliminarysacrificial layer pattern 22. In an example embodiment, the secondinsulation layer 70 may be formed using an oxide.

The second mask layer 80 may be formed using a material substantiallythe same as that of the first mask layer 40 or a material different fromthat of the first mask layer 40. The second mask layer 80 may be formedusing a material having an etching selectivity with respect to thesecond insulation layer 70, the mask pattern 44, the preliminary channellayer pattern 32 and the preliminary sacrificial layer pattern 22. In anexample embodiment, the second mask layer 80 may be formed using anitride.

The second mask layer 80 may be patterned to extend in the seconddirection D2. Thus, a second mask 82, as depicted in FIG. 2G, may have athird opening 53 therethrough, which partially exposes the secondinsulation layer 70. The second mask 82 may be formed by a conventionalphotolithography process using a second photoresist layer (not shown).

A portion of the second insulation layer 70 exposed by the third opening53 may be removed by an etching process using the second mask 82 as anetching mask to form a fourth opening 54 partially exposing the maskpattern 44 and the first insulation layer 60, as depicted in FIG. 2H.Thus, a second insulation layer pattern 72 and the second mask 82 may beformed on the mask pattern 44 and the first insulation layer 60. Theetching process may include a dry etching process using an etching gasor a wet etching process using an etching solution. If the secondinsulation layer 70 is formed using an oxide such as silicon oxide, theetching solution may include a mixed solution containing nitric acid andhydrofluoric acid.

Referring to FIG. 21, a portion of the mask pattern 44 exposed by afourth opening 54 may be removed by an etching process using the secondmask 82, the second insulation layer pattern 72 and a portion of thefirst insulation layer 60 which may be exposed by the fourth opening 54as etching masks to form a fifth opening 55 which may partially exposethe preliminary channel layer pattern 32. The etching process mayinclude a dry etching process using an etching gas. A portion of thepreliminary channel layer pattern 32 may be exposed by the fifth opening55 and a portion of the preliminary sacrificial layer pattern 22 may bedisposed beneath the exposed portion of the preliminary channel layerpattern 32 which may be removed by a dry etching process.

Portions of the mask pattern 44, the preliminary channel layer pattern32 and the preliminary sacrificial layer pattern 22, which may bedisposed beneath or under the second mask 82 and the second insulationlayer pattern 72, may not be exposed by the fifth opening 55 so that theportions may not be removed in the dry etching process, to therebyremain on the semiconductor substrate 10.

As illustrated in FIG. 21, the first width W1 of the preliminary channellayer pattern 32 may be greater than the second width W2 of the maskpattern 44 so that portions of the preliminary channel layer pattern 32and the preliminary sacrificial layer pattern 22, which correspond tothe second width W2, may be removed, but other portions of thepreliminary channel layer pattern 32 and the preliminary sacrificiallayer pattern 22 may remain. Thus, a sixth opening 56 (see FIG. 2J)exposing a portion of the semiconductor substrate 10 may be formed, anda sacrificial layer pattern 25 and a channel layer pattern 35 may beformed on another portion of the semiconductor substrate 10, which maynot be exposed by the sixth opening 56.

Referring to FIG. 2J, a portion of the first insulation layer 60 exposedby the fourth opening 54 may be removed to form a seventh opening 57having the channel layer pattern 35 and the sacrificial layer pattern 25therein. The seventh opening 57 may be formed by a dry etching processusing an etching gas or by a wet etching process using an etchingsolution. If the first insulation layer 60 is formed using an oxide suchas silicon oxide, the etching solution may include a mixed solutioncontaining nitric acid and hydrofluoric acid.

The sacrificial layer pattern 25 may be removed by an etching process sothat the channel layer pattern 35 may be transformed to a preliminarynanowire channel 37, as depicted in FIG. 2K. The sacrificial layerpattern 25 may be removed by a wet etching process using an etchingsolution or an isotropic plasma etching process using an etching gas.The etching solution may include a solution having an etchingselectivity between silicon germanium and silicon and between silicongermanium and oxide. The isotropic plasma etching process may beperformed under an atmosphere of mixed gas including hydrogen bromideand oxygen.

The preliminary nanowire channel 37 may have a shape of a square pillarinstead of a circular cylinder or an elliptic cylindrical. If thepreliminary nanowire channel 37 has a square pillar shape, an annealingprocess may be performed on the preliminary nanowire channel 37 under ahydrogen atmosphere so that an edge portion of the preliminary nanowirechannel 37 may be rounded. Particularly, the annealing process may beperformed at a temperature of about 800 to about 1000° C. under apressure below about 10 Torr for about 100 to about 1000 seconds. If theedge portion of the preliminary nanowire channel 37 is rounded by theannealing process, an area surrounded covered by a gate electrode 92(see FIG. 20) may be increased, such that a short channel effect may bereduced and characteristics of a gate insulation layer may be improved.

The gate insulation layer including silicon oxide may be further formedby a heat treatment process on the preliminary nanowire channel 37, thepreliminary channel layer pattern 32, the preliminary sacrificial layerpattern 22 and the semiconductor substrate 10, all of which includesilicon therein.

Referring to FIG. 2L, a gate conductive layer 90 may be formed on thesemiconductor substrate 10 to cover the seventh opening 57. The gateconductive layer 90 may be formed using a metal nitride such as titaniumnitride, tantalum nitride, etc., a metal such as titanium, tantalum,etc., or polysilicon. In an example embodiment, the gate conductivelayer 90 may be formed using titanium nitride.

The second mask 82, the second insulation layer pattern 72 and the maskpattern 44 may be removed, as depicted in FIG. 2M. A portion of thefirst insulation layer 60 may be removed to form a first insulationlayer pattern 62. The second mask 82, the second insulation layerpattern 72, the mask pattern 44 and the portion of the first insulationlayer 60 may be removed by a wet etching process using an etchingsolution or a dry etching process using an etching gas.

The first insulation layer pattern 62 may be removed by an etchingprocess, as depicted in FIGS. 2N and 3A. In FIG. 3A, a first portion ofthe gate conductive layer 90 under the preliminary nanowire channel 37has a width greater than that of a second portion of the gate conductivelayer 90 over the preliminary nanowire channel 37. Additionally, a topsurface of the semiconductor substrate 10 under the gate conductivelayer 90 may be partially removed. The above width difference betweenthe first and second portions of the gate conductive layer 90 and theabove partial removal of the top surface of the semiconductor substrate10 may be generated because of an excessive etching of the sacrificiallayer pattern 25 (as depicted in FIG. 2J) and the semiconductorsubstrate 10 if the sacrificial layer pattern 25 is removed by anetching process. The excessive etching may be frequently generated in awet etching process. However, the excessive etching may not be generatedmuch in an isotropic plasma etching process.

The gate conductive layer 90 may be partially removed by a strippingprocess and/or an ashing process, as depicted in FIGS. 2O and 3B.Alternatively, the gate conductive layer 90 may be partially removed bya wet etching process. Thus, the gate conductive layer 90 may betransformed to a gate electrode 92 having a size smaller than that ofthe gate conductive layer 90. In an example embodiment, the strippingprocess may be performed using polyacrylonitrile (PAN).

Accordingly, a portion of the preliminary nanowire channel 37 in thegate conductive layer 90 may be exposed. Additionally, the gateelectrode 92 and the remaining preliminary channel layer pattern 32 donot contact each other.

Referring to FIGS. 2P and 3C, a third insulation layer 100 may be formedon the semiconductor substrate 10 to cover the gate electrode 92, thepreliminary nanowire channel 37, the preliminary channel layer pattern32 and the preliminary sacrificial layer pattern 22. The thirdinsulation layer 100 may be formed using a material substantially thesame as or different from those of the first and second insulationlayers 60 and 70. That is, the third insulation layer 100 may be formedusing an oxide such as silicon oxide, an HDP oxide, etc. The thirdinsulation layer 100 may be partially removed until a top surface of thegate electrode 92 may be exposed, and the top surface of the gateelectrode and a top surface of the third insulation layer 100 may beplanarized.

The third insulation layer 100, as shown in FIG. 3C, may be also formedbetween the gate electrode 92 and the preliminary channel layer pattern32. Thus, the gate electrode 92 and the preliminary channel layerpattern 32 may not contact each other.

The third insulation layer 100 may be partially removed until an upperface of the preliminary channel layer pattern 32 may be exposed to forma third insulation layer pattern 102, as depicted in FIGS. 2Q and 3D.Thus, an upper portion of the gate electrode 92 may be exposed. Thethird insulation layer pattern 102 may serve as an isolation layer.Additionally, as illustrated above, the third insulation layer pattern102 may be disposed between the gate electrode 92 and the preliminarychannel layer pattern 32, so that the gate electrode 92 and thepreliminary channel layer pattern 32 may not contact each other.

Referring to FIGS. 2R and 3E, a fourth insulation layer 110 may beformed on the preliminary channel layer pattern 32, the third insulationlayer pattern 102 and the exposed upper portion of the gate electrode92. The fourth insulation layer 110 may be formed using a materialsubstantially the same as or different from those of the first to thirdinsulation layers 60, 70 and 100. That is, the fourth insulation layer110 may be formed using an oxide such as silicon oxide, an HDP oxide,etc. or a nitride such as silicon nitride. In an example embodiment, thefourth insulation layer 110 may be formed using silicon nitride.

Referring to FIGS. 2S and 3F, the fourth insulation layer 110 may bepartially removed to form a spacer 112 on a sidewall of the gateelectrode 92, the preliminary channel layer pattern 32 and the thirdinsulation layer pattern 102. In an example embodiment, the fourthinsulation layer 110 may be partially removed by an etch-back process.

The spacer 112 may be formed to have a width greater than a length ofthe preliminary nanowire channel 37 as shown in FIG. 3F. Thus,impurities may not be directly implanted into the preliminary nanowirechannel 37 in a successive process.

Impurities may be implanted into the preliminary channel layer pattern32 to form a source/drain layer, as depicted in FIGS. 2T and 3G Theimpurities may include p-type impurities or n-type impurities accordingto a type of a transistor. If concentrations of the impurities areincreased, some of the impurities implanted into the preliminary channellayer pattern 32 move to the preliminary nanowire channel 37. Thus, thepreliminary nanowire channel 37 may be converted into a nanowire channel39 doped with impurities. As mentioned above, the spacer 112 preventsthe impurities from being implanted into the preliminary nanowirechannel 37 so that the preliminary nanowire channel 37 may not bedamaged.

The GAA type semiconductor device in which the gate electrode 92surrounds the nanowire channel 39 may be completed by the aboveprocesses.

According to some example embodiments, in a gate-all-around (GAA) typesemiconductor device having a nanowire channel, a size of a gateelectrode may be reduced and an insulation layer pattern may be formedbetween the gate electrode and a source/drain layer. Thus, an area atwhich the gate electrode makes contact with the source/drain layer maybe reduced so that a gate induced drain leakage (GIDL) may be reduced.Additionally, a gate leakage current may be reduced because a distancebetween the gate electrode and the source/drain layer may be increased.Furthermore, the gate electrode has a size smaller than that of aconventional gate electrode so that the GAA type semiconductor devicemay advantageously have a greater integration degree.

The foregoing is illustrative of example embodiments and are not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible without materially departing from thenovel teachings and advantages. Accordingly, all such modifications maybe intended to be included within the scope of the example embodimentsas defined in the claims. In the claims, means-plus-function clauses maybe intended to cover the structures described herein as performing therecited function and not only structural equivalents but also equivalentstructures. Therefore, it is to be understood that the foregoing may beillustrative of example embodiment and may not to be construed aslimited to the specific example embodiments disclosed, and thatmodifications to the disclosed example embodiments, as well as otherexample embodiments, are intended to be included within the scope of theappended claims. The example embodiments may be defined by the followingclaims, with equivalents of the claims to be included therein.

1. A gate-all-around type semiconductor device comprising: a sourcelayer and a drain layer disposed at a predetermined distance apart fromeach other in a first direction on a semiconductor substrate; a nanowirechannel connecting the source layer and the drain layer; a gateelectrode extending in a second direction substantially perpendicular tothe first direction, wherein the gate electrode has a height in a thirddirection substantially perpendicular to the first and second directionsand partially surrounds the nanowire channel; and an insulation layerpattern between the source/drain layers on the semiconductor substrate,the insulation layer pattern covering the nanowire channel and a portionof the gate electrode.
 2. The semiconductor device of claim 1, furthercomprising a sacrificial layer pattern formed between the semiconductorsubstrate and the source/drain layers.
 3. The semiconductor device ofclaim 2, wherein the semiconductor substrate comprises single crystalsilicon, the source layer and the drain layer comprise doped singlecrystal silicon, and the sacrificial layer pattern comprises silicongermanium.
 4. The semiconductor device of claim 1, wherein the nanowirechannel has a circular cylindrical shape or an elliptic cylindricalshape extending in the first direction.
 5. The semiconductor device ofclaim 1, wherein the gate electrode is selected from the groupconsisting of a metal, a metal nitride and polysilicon.
 6. Thesemiconductor device of claim 5, wherein the gate electrode is titaniumnitride.
 7. The semiconductor device of claim 1, wherein the nanowirechannel and the source layer and drain layer are all active regions. 8.The semiconductor device of claim 7, wherein the insulation layerpattern serves as an isolation layer for isolating the active regionsfrom each other.
 9. A method of manufacturing a gate-all-around typesemiconductor device, the method comprising: providing a semiconductorsubstrate; forming a preliminary sacrificial layer, disposed lengthwisein a first direction, over the semiconductor substrate; forming apreliminary channel layer over the preliminary sacrificial layer;forming a first mask pattern over the preliminary channel layer, whereinthe preliminary sacrificial layer and the preliminary channel layer havea width greater than a width of the first mask pattern; forming a firstinsulation layer on the semiconductor substrate to cover the first maskpattern, the preliminary channel layer and the preliminary sacrificiallayer, the first insulation layer having a first opening exposing aportion of the first mask pattern; forming a second insulation layerover the first insulation layer and the first mask pattern; forming asecond mask pattern and a third mask pattern over the second insulationlayer, wherein the second and third mask patterns, disposed in a seconddirection approximately perpendicular to the first direction, arelocated toward distal ends of the preliminary sacrificial layer; forminga second opening by removing an exposed portion of the second insulationlayer and first mask pattern, and by removing a portion of thepreliminary channel layer directly under the first mask pattern, suchthat a channel layer and a sacrificial layer are formed; forming a thirdopening by partially removing portions of the first insulation layerleft exposed by the second mask pattern; transforming the channel layerto a preliminary nanowire channel by removing the sacrificial layer;forming a gate conductive layer on the semiconductor substrate to coverthe second and third opening; removing the second and third maskpatterns, and removing the first insulation layer; forming a gateelectrode by partially removing the gate conductive layer to detach thegate electrode from the preliminary channel layer; forming a thirdinsulation layer on the semiconductor substrate to cover sides of thegate electrode, the preliminary nanowire channel, the preliminarychannel layer, and the preliminary sacrificial layer, and implantingimpurities into the preliminary channel layer to convert the preliminarychannel layer and the preliminary nanowire channel into a source/drainlayer and a nanowire channel, respectively.
 10. The method of claim 9,wherein the semiconductor substrate and the preliminary channel layerare formed using single crystal silicon, and the preliminary sacrificiallayer is formed using silicon germanium.
 11. The method of claim 10,wherein the preliminary channel layer and the preliminary sacrificiallayer are formed by an epitaxial growth process.
 12. The method of claim9, further comprising annealing the preliminary nanowire channel, priorto forming the gate conductive layer.
 13. The method of claim 12,wherein annealing the preliminary nanowire channel is performed at atemperature of about 800 to about 1000° C under a pressure below about10 Torr for about 100 to about 1000 seconds.
 14. The method of claim 9,prior to implanting the impurities into the preliminary channel layer,further comprising: partially removing the third insolation layer untilan upper face of the preliminary channel layer is exposed and an upperportion of the gate electrode is also exposed; forming a fourthinsulation layer on the exposed gate electrode, the preliminary channellayer, and the third insulation layer; and partially removing the fourthinsulation layer by an etch-back process to form a spacer, the spacercovering a portion of sidewalls of the gate electrode and a portion ofthe preliminary channel layer and a portion of the third insulationlayer;
 15. The method of claim 14, wherein partially removing the thirdinsulation layer comprising: partially removing the third insulationlayer until a top surface of the gate electrode is exposed; andplanarizing a top surface of the third insulation layer and a topsurface of the gate electrode, such that both top surfaces areapproximately flush with each other.
 16. The method of claim 9, whereinforming the gate electrode is performed by a stripping process usingpolyacrylonitrile (PAN).
 17. The method of claim 9, wherein forming thesacrificial layer and the channel layer is performed by a dry etchingprocess.
 18. The method of claim 9, wherein the gate conductive layer isselected from the group consisting of a metal, a metal nitride andpolysilicon.
 19. The method of claim 18, wherein the gate electrode istitanium nitride.